The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Journal article The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Book chapter / Article in edited volumes Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC (2022) May A, Rommel M, Beuer S, Erlbacher T Journal article Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices (2022) Kodolitsch E, Sodan V, Krieger M, Tsavdaris N Journal article Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry (2022) Ihle J, Wellmann P Conference contribution Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide (2022) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications (2022) Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P Conference contribution