The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T (2023)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2023
Journal
Publisher: Trans Tech Publications Ltd
Series: Materials Science Forum
Book Volume: 1090
Pages Range: 127-133
DOI: 10.4028/p-4i3rhf
Abstract
For the ongoing commercialization of power devices based on 4H-SiC, increasing the yield and improving the reliability of these devices is becoming more and more important. In this investigation, gate oxide on 4H-SiC was examined by time-zero dielectric breakdown (TZDB) and constant current stress (CCS) time-dependent dielectric breakdown (TDDB) method in order to get insights into the influence of the epitaxial defects on the gate oxide performance and reliability. For that purpose, MOS capacitors with different gate oxides have been fabricated. Crystal defects in the epitaxial layers have been detected and mapped by ultraviolet photoluminescence (UVPL) and interference contrast (DIC) imaging. The results of the comparison of electrical data and surface mapping data indicate a negative influence on the leakage current behavior for some extended epitaxial defects. Results from TDDB measurement indicated numerous extrinsic defects, which can be traced back to gate oxide processing conditions and defect densities.
Involved external institutions
Germany (DE)How to cite
APA:
Schlichting, H., Lim, M., Becker, T., Kallinger, B., & Erlbacher, T. (2023). The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability. In (pp. 127-133). Trans Tech Publications Ltd.
MLA:
Schlichting, Holger, et al. "The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability." Trans Tech Publications Ltd, 2023. 127-133.
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