Materials Science Forum
Journal Abbreviation: MATER SCI FORUM
ISSN: 0255-5476
eISSN: 1662-9752
Publisher: Trans Tech Publications
Publications (167)
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019)
Salamon M, Arzig M, Uhlmann N, Wellmann P
Journal article
Matera building stones: Comparison between bioclastic and lithoclastic calcarenites (2019)
Bonomo AE, Lezzerini M, Prosser G, Munnecke A, Koch R, Rizzo G
Book chapter / Article in edited volumes
Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019)
Albrecht M, Erlbacher T, Bauer A, Frey L
Journal article, Report
Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019)
Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L
Conference contribution
Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019)
Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A
Conference contribution
Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019)
Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R
Conference contribution
Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019)
Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X
Conference contribution
New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019)
Höchbauer T, Heidorn C, Tsavdaris N
Conference contribution
On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019)
Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T
Conference contribution
Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019)
Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T
Conference contribution