Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation
Albrecht M, Erlbacher T, Bauer A, Frey L (2019)
Publication Status: Published
Publication Type: Journal article, Report
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Pages Range: 827-831
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.827
Abstract
In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, pMOSFETs, CMOS inverters and ring oscillators with different channel implantation doses were fabricated and electrically characterized. The threshold voltage of the resulting p-MOSFETs was shifted from-5 V to-3.6 V whereas the effective channel mobility was slightly decreased from 11.8 cm²/Vs to 10.2 cm²/Vs for a p-MOSFET channel implantation dose of 2∙1013 cm-2 compared to the non-implanted channel. The resulting p-MOSFETs enable SiC CMOS logic circuits to operate with a 5 V power supply and to satisfy 5 V TTL input level specification over the whole temperature range of 25°C to 400°C. Furthermore the propagation delay time of inverters was reduced by 80% at 25°C and 40% at 400°C compared to inverters without p-MOSFET channel implantation.
Authors with CRIS profile
Matthäus Albrecht
Lehrstuhl für Elektronische Bauelemente
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Albrecht, M., Erlbacher, T., Bauer, A., & Frey, L. (2019). Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation. Materials Science Forum, 827-831. https://doi.org/10.4028/www.scientific.net/MSF.963.827
MLA:
Albrecht, Matthäus, et al. "Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation." Materials Science Forum (2019): 827-831.
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