Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P (2022)
Publication Type: Conference contribution
Publication year: 2022
Publisher: Trans Tech Publications Ltd
Book Volume: 1062 MSF
Pages Range: 74-78
Conference Proceedings Title: Materials Science Forum
Event location: Online
ISBN: 9783035727609
DOI: 10.4028/p-6ef373
One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, with a sublimation growth process called close spaced PVT (CS-PVT). Freestanding 3C-SiC seeding layers were grown by a homoepitaxial CVD process. Subsequently CS-PVT was used to grow crystals up to a thickness of 1 mm. To prevent backside sublimation a carbon containing layer was applied as protection. Due to the presence of a wafer bow as well as a rough backside of the used seeds additional effort was necessary to apply the coating. After growth no visible curvature was present independent of the grown layer thickness and sample size. Raman spectroscopy was performed on the seeds and grown crystals, showing that the overall stress level of the material was reduced by CS-PVT.
APA:
Kollmuß, M., Schöler, M., Anzalone, R., Mauceri, M., La Via, F., & Wellmann, P. (2022). Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 74-78). Online: Trans Tech Publications Ltd.
MLA:
Kollmuß, Manuel, et al. "Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 74-78.
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