Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P (2022)

Publication Type: Conference contribution

Publication year: 2022

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 1062 MSF

Pages Range: 119-124

Conference Proceedings Title: Materials Science Forum

Event location: Online

ISBN: 9783035727609

DOI: 10.4028/p-nshb40

Abstract

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

Authors with CRIS profile

Manuel Kollmuß Institute Materials for Electronics and Energy Technology (i-MEET) Johannes Köhler Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Rainer Hock Professur für Kristallographie und Strukturphysik Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of Grenoble Alpes (UGA) / Université de Grenoble FR France (FR) Technical University of Denmark / Danmarks Tekniske Universitet (DTU) DK Denmark (DK)

How to cite

APA:

Kollmuß, M., Köhler, J., Ou, H., Fan, W., Chaussende, D., Hock, R., & Wellmann, P. (2022). Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 119-124). Online: Trans Tech Publications Ltd.

MLA:

Kollmuß, Manuel, et al. "Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 119-124.

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