Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P (2022)
Publication Type: Conference contribution
Publication year: 2022
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 1062 MSF
Pages Range: 89-93
Conference Proceedings Title: Materials Science Forum
Event location: Online
ISBN: 9783035727609
DOI: 10.4028/p-f58944
Abstract
The growth conditions of 75 mm SiC crystals in the PVT process is varied by different methods while the temperature field is kept constant. The addition of graphite into the source material leads to the formation of an ordered step flow with step heights of 0.014 µm, while the addition of graphite into the source together with N2 doping changes the step kinetics on the main facet, leading to very large, bunched steps of 0.17 µm. When elemental Si was added into the source material large macro steps are formed on the whole crystal surface. While the doping induced step bunching is related to the incorporation kinetics, the large steps induced in Si-rich conditions are attributed the reduction of surface energy. With the variation of the inert gas pressure the morphology of the surface is altered, similarly. Under low pressure conditions (0.2 mbar) a fine step structure evolves, while at a high pressure (40mbar) large surface steps are formed on the whole growth interface. Large surface steps are strongly impeded in their lateral motion at defects permeating the growth interface. At these sites the formation of foreign polytypes is facilitated.
Authors with CRIS profile
Matthias Arzig
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Ulrike Künecke
Institute Materials for Electronics and Energy Technology (i-MEET)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Arzig, M., Künecke, U., Salamon, M., Uhlmann, N., & Wellmann, P. (2022). Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 89-93). Online: Trans Tech Publications Ltd.
MLA:
Arzig, Matthias, et al. "Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 89-93.
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