In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry

Ihle J, Wellmann P (2022)


Publication Type: Conference contribution

Publication year: 2022

Journal

Publisher: Trans Tech Publications Ltd

Book Volume: 1062 MSF

Pages Range: 79-83

Conference Proceedings Title: Materials Science Forum

Event location: Online

ISBN: 9783035727609

DOI: 10.4028/p-gt22u6

Abstract

Different initial process steps during PVT crystal growth of SiC were monitored with a mass spectrometer. To measure the gas phase composition in the PVT growth machine during these steps the continuously pumped exhaust gas was analyzed by a quadrupole mass spectrometer (PrismaPro QMG 250). In order to reduce unintentionally doping of the crystal by contaminations in the growth setup the focus was on the release of nitrogen during the initial steps of the growth process. During the heat up of the growth setup in vacuum a substantial release of molecular nitrogen was observed at 800 °C. Further, the influence of pump and purge-steps on the amount of nitrogen in the gas phase was examined. After performing a pump and purge step, the intensity of the measurable nitrogen-related signal (m/z = 28) was approximately 20 % of the initial value. In-situ monitoring of the gas phase during the initial steps of crystal growth proved to be a versatile tool for the development of a process minimizing unintentionally doping through released nitrogen.

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How to cite

APA:

Ihle, J., & Wellmann, P. (2022). In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 79-83). Online: Trans Tech Publications Ltd.

MLA:

Ihle, Jonas, and Peter Wellmann. "In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 79-83.

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