Review of Sublimation Growth of SiC Bulk Crystals

Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, Lavia F, Salamon , Uhlmann N, Roder M, Danilewsky A, Nguyen BD, Sandfeld S (2022)


Publication Type: Conference contribution

Publication year: 2022

Journal

Publisher: Trans Tech Publications Ltd

Book Volume: 1062 MSF

Pages Range: 104-112

Conference Proceedings Title: Materials Science Forum

Event location: Virtual, Online

ISBN: 9783035727609

DOI: 10.4028/p-05sz31

Abstract

The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).

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How to cite

APA:

Wellmann, P., Arzig, M., Ihle, J., Kollmuß, M., Steiner, J., Mauceri, M.,... Sandfeld, S. (2022). Review of Sublimation Growth of SiC Bulk Crystals. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 104-112). Virtual, Online: Trans Tech Publications Ltd.

MLA:

Wellmann, Peter, et al. "Review of Sublimation Growth of SiC Bulk Crystals." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Virtual, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 104-112.

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