Dr.-Ing. Johannes Steiner

Institute Materials for Electronics and Energy Technology (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C (2023) Steiner J, Schultheiß J, Wang S, Wellmann P Journal article The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology (2023) Wellmann P, Steiner J, Strüber S, Arzig M, Salamon M, Uhlmann N, Nguyen BD, Sandfeld S Journal article Novel Photonic Applications of Silicon Carbide (2023) Ou H, Shi X, Lu Y, Kollmuß M, Steiner J, Tabouret V, Syväjärvi M, et al. Journal article, Review article Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations (2023) Nguyen BD, Roder M, Danilewsky A, Steiner J, Wellmann P, Sandfeld S Journal article Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth (2023) Steiner J, Nguyen BD, Sandfeld S, Wellmann P Book chapter / Article in edited volumes Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC (2023) Strüber S, Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P Book chapter / Article in edited volumes Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process (2022) Steiner J, Wellmann P Journal article Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution On the importance of dislocation flow in continuum plasticity models for semiconductor materials (2020) Nguyen BD, Rausch A, Steiner J, Wellmann P, Sandfeld S Journal article