Steiner J, Nguyen BD, Sandfeld S, Wellmann P (2023)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2023
Publisher: Trans Tech Publications Ltd
Series: Solid State Phenomena
Book Volume: 343
Pages Range: 9-14
DOI: 10.4028/p-eu98j0
To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.
APA:
Steiner, J., Nguyen, B.D., Sandfeld, S., & Wellmann, P. (2023). Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth. In (pp. 9-14). Trans Tech Publications Ltd.
MLA:
Steiner, Johannes, et al. "Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth." Trans Tech Publications Ltd, 2023. 9-14.
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