Improved Mapping of Yield Locus Distortion through a Strain-Dependent Calibration of the Barlat Yld2000-2d Yield Criterion (2026) Rentz M, Merklein M Conference contribution, Conference Contribution Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals (2026) Zöcklein J, Strüber S, Grazzi C, Arneberg NC, Straub T, Greulich-Weber S, Wellmann P Journal article Close Space PVT Growth of N-and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS™ Growth Machine (2026) Strüber S, Grazzi C, Tana L, Schneider O, Wagner T, Wiedemann JP, Wunder P, Wellmann P Journal article Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation (2025) Jayaprakash H, Csato C, Kato M, Tong L, Krippendorf F, Rueb M Book chapter / Article in edited volumes Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements (2024) Cornigli D, Schlichting H, Becker T, Larcher L, Erlbacher T, Pešić M Journal article Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization (2024) Becker T, Hellinger C, Fuchs A, Körfer J, Rusch O Journal article Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device (2024) Boettcher N, Rommel M, Erlbacher T Journal article Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules (2024) Schultheiß J, Ihle J, Nanot SU, Bonanomi S, Munoz DC, Hammer R, Wellmann P Book chapter / Article in edited volumes Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask (2024) Rusch O, Brueckner K, Erlbacher T Book chapter / Article in edited volumes Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD (2024) Böttcher N, Sakai K, Szabo M, Beuer S, Rommel M Journal article, Report