Close Space PVT Growth of N-and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS™ Growth Machine

Strüber S, Grazzi C, Tana L, Schneider O, Wagner T, Wiedemann JP, Wunder P, Wellmann P (2026)


Publication Type: Journal article

Publication year: 2026

Journal

Publisher: Trans Tech Publications Ltd

Series: Solid State Phenomena

Book Volume: 393

Pages Range: 47-52

DOI: 10.4028/p-Ro32jp

Abstract

Close Space PVT (CS-PVT) is a modification of standard PVT exhibiting a short source-to-seed-distance and enabling a large variety of growth process variations to meet the specific requirements of the SiC material (i.e. special polytype and/or doping) to be grown. In this work, we study the growth of 4H-SiC p-i-n structures exhibiting thick SiC layers to be used as SiC photovoltaic cells for remote power transfer in space. Nevertheless, the found results are also applicable (i) to the SiC thick layer growth of power electronic devices and (ii) SiC pucks with a thickness of up to 10mm. In addition, we present the new type of growth machine TableTopCSTM in its design being dedicated for the special crucible configuration of CS-PVT.

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How to cite

APA:

Strüber, S., Grazzi, C., Tana, L., Schneider, O., Wagner, T., Wiedemann, J.P.,... Wellmann, P. (2026). Close Space PVT Growth of N-and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS™ Growth Machine. Solid State Phenomena, 393, 47-52. https://doi.org/10.4028/p-Ro32jp

MLA:

Strüber, Sven, et al. "Close Space PVT Growth of N-and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS™ Growth Machine." Solid State Phenomena 393 (2026): 47-52.

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