Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
Zöcklein J, Strüber S, Grazzi C, Arneberg NC, Straub T, Greulich-Weber S, Wellmann P (2026)
Publication Type: Journal article
Publication year: 2026
Journal
Publisher: Trans Tech Publications Ltd
Series: Solid State Phenomena
Book Volume: 393
Pages Range: 53-58
DOI: 10.4028/p-LHD7xc
Abstract
We have investigated the applicability of a new type of 3C-SiC powder source material during PVT growth which consist of a particle size of ca. 10 µm (aggregates up to ca. 150 µm). In-situ X-ray visualization of 75 mm and 100 mm PVT growth runs showed a smooth SiC powder consumption during growth. Using Raman spectroscopy, we have found a high 4H-SiC polytype stability and a low residual stress distribution in the intentionally n-type doped grown crystals.
Authors with CRIS profile
Julian Zöcklein
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Sven Strüber
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Cristina Grazzi
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Zöcklein, J., Strüber, S., Grazzi, C., Arneberg, N.C., Straub, T., Greulich-Weber, S., & Wellmann, P. (2026). Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals. Solid State Phenomena, 393, 53-58. https://doi.org/10.4028/p-LHD7xc
MLA:
Zöcklein, Julian, et al. "Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals." Solid State Phenomena 393 (2026): 53-58.
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