The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology

Wellmann P, Steiner J, Strüber S, Arzig M, Salamon M, Uhlmann N, Nguyen BD, Sandfeld S (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Book Volume: 136

Article Number: 109895

DOI: 10.1016/j.diamond.2023.109895

Abstract

This work paper was presented as a keynote lecture at the international conference on diamond and related materials in Lisbon (Portugal) in the year 2022. This paper summarizes in the first part the processing chain of the semiconductor material SiC from the raw material to epitaxially-ready wafers as they are used for electronic device manufacturing. In the second part a current research study, the reduction of the basal plane dislocation density in SiC crystal growth is presented. Among other defects, basal plane dislocations belong to the more severe structural defects in SiC with respect to degradation during electronic device operation. In the third part the applicability of X-ray topography to reveal dislocations and other structural defects in SiC is outlined in a review style.

Authors with CRIS profile

Involved external institutions

Forschungszentrum Jülich / Research Centre Jülich (FZJ) Germany (DE) Fraunhofer Development Center X-ray Technology (EZRT) Germany (DE)

How to cite

APA:

Wellmann, P., Steiner, J., Strüber, S., Arzig, M., Salamon, M., Uhlmann, N.,... Sandfeld, S. (2023). The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology. Diamond and Related Materials, 136. https://dx.doi.org/10.1016/j.diamond.2023.109895

MLA:

Wellmann, Peter, et al. "The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology." Diamond and Related Materials 136 (2023).

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