Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes (2025) Kinstler A, Neumann R, Taylor AA, Besendörfer S, Meißner E, Weingärtner R, Brunner F, et al. Journal article Quantum efficiency scaling by cascaded Ge multi-stage tunnel junctions (2025) Hack M, Korner R, Schwarz D, Daus A, Schulze J, Oehme M Journal article Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions (2025) Wimmer J, Dick J, Schulze J Conference contribution Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes (2025) Ultsch S, Dick J, Schwarz J, Schulze J Conference contribution Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes (2025) Schwemmer B, Dick J, May A, Schulze J Conference contribution 600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform (2025) Kammel R, Dick J, May A, Rommel M, Schulze J Conference contribution Determination of the scattering length (Γ → L) by the electrically pumped Germanium Zener Emitter (2025) Hack M, Seidel L, Wanitzek M, Oehme M, Daus A, Schulze J, Schwarz D Journal article Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors (2024) Seidel L, Liu T, Concepción O, Marzban B, Kiyek V, Spirito D, Schwarz D, et al. Journal article Ge-on-Si single-photon avalanche diode using a double mesa structure (2024) Wanitzek M, Schulze J, Oehme M Journal article Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection (2024) Wanitzek M, Hack M, Schwarz D, Schulze J, Oehme M Journal article