Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes (2026) Schwarberg J, Magerl F, Beuer S, May A, Gobert C, Siebert M, Miersch C, et al. Journal article, Letter Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters (2026) Schwarberg J, Dick J, May A, Michałowski P, Kallinger B, Kammel R, Rommel M, Schulze J Journal article Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of Silicon Vacancies (2026) Schwarberg J, Gobert C, Hrunski F, May A, Knolle W, Kallinger B, Schmid F, et al. Journal article Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes (2025) Kinstler A, Neumann R, Taylor AA, Besendörfer S, Meißner E, Weingärtner R, Brunner F, et al. Journal article Quantum efficiency scaling by cascaded Ge multi-stage tunnel junctions (2025) Hack M, Korner R, Schwarz D, Daus A, Schulze J, Oehme M Journal article Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions (2025) Wimmer J, Dick J, Schulze J Conference contribution Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes (2025) Ultsch S, Dick J, Schwarz J, Schulze J Conference contribution, Original article Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes (2025) Schwemmer B, Dick J, May A, Schulze J Conference contribution 600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform (2025) Kammel R, Dick J, May A, Rommel M, Schulze J Conference contribution Determination of the scattering length (Γ → L) by the electrically pumped Germanium Zener Emitter (2025) Hack M, Seidel L, Wanitzek M, Oehme M, Daus A, Schulze J, Schwarz D Journal article