Correction: Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes (Scientific Reports, (2025), 15, 1, (39578), 10.1038/s41598-025-25338-0)

Kinstler A, Neumann R, Taylor AA, Besendörfer S, Meißner E, Weingärtner R, Brunner F, Brusaterra E, Treidel EB, Schulze J (2026)


Publication Type: Journal article, Erratum

Publication year: 2026

Journal

Book Volume: 16

Article Number: 15340

DOI: 10.1038/s41598-026-53284-y

Abstract

Correction to: Scientific Reportshttps://doi.org/10.1038/s41598-025-25338-0, published online 12 November 2025 The original version of this Article contained an error in Table 1 under the heading ‘Leakage Mechanism’, where the equation for “Phonon-Assisted-Tunneling (PAT)” under the heading ‘Analytical Expression’ was incorrect. The correct and incorrect values appear below. Incorrect: Correct: The original Article has been corrected.

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How to cite

APA:

Kinstler, A., Neumann, R., Taylor, A.A., Besendörfer, S., Meißner, E., Weingärtner, R.,... Schulze, J. (2026). Correction: Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes (Scientific Reports, (2025), 15, 1, (39578), 10.1038/s41598-025-25338-0). Scientific Reports, 16. https://doi.org/10.1038/s41598-026-53284-y

MLA:

Kinstler, Alexander, et al. "Correction: Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes (Scientific Reports, (2025), 15, 1, (39578), 10.1038/s41598-025-25338-0)." Scientific Reports 16 (2026).

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