The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics

Dick J, Schwarberg J, Rommel M, Schulze J (2026)

Publication Type: Journal article

Publication year: 2026

Journal

Key Engineering Materials Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Series: Key Engineering Materials

Book Volume: 1055

Pages Range: 7-14

DOI: 10.4028/p-jgTu1m

Abstract

With ever-increasing power conversion densities in electric power converters, the volume of the converter must shrink for a certain power rating, which in turn demands the reduction in size of the energy-storing passive component. Constant power rating of those systems and the reduction of size of passive components leads to a higher switching frequency of the semiconductor power switches. At high switching frequencies, dynamic losses in the power semiconductor device dominate the overall power losses. Consequently, novel device concepts that address dynamic power losses may be superior to conventional power devices, even though they might have a higher static on-state loss. In this paper, the concept of the power tunneling field-effect transistor (Power-TFET) employing tunneling between a highly p-type doped source region and a n-type accumulation channel is proposed and compared to an equivalent LDMOS in terms of static and dynamic losses. Devices fabricated in a 2 µm 4H-SiC technology are measured and compared to evaluate the viability of the Power-TFET device concept. The fabricated Power-TFET shows high-voltage blocking capability and has a switchable tunneling junction with on-and off-state, despite showing high on-state resistance due to the tunneling through the wide bandgap of 4H-SiC. The alternative of tunneling through a switchable Schottky barrier is simulatively explored to solve the high on-state resistance of the pn-junction based Power-TFET.

Authors with CRIS profile

Jan Dick Lehrstuhl für Elektronische Bauelemente Jannik Schwarberg Lehrstuhl für Elektronische Bauelemente Jörg Schulze Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Dick, J., Schwarberg, J., Rommel, M., & Schulze, J. (2026). The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics. Key Engineering Materials, 1055, 7-14. https://doi.org/10.4028/p-jgTu1m

MLA:

Dick, Jan, et al. "The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics." Key Engineering Materials 1055 (2026): 7-14.

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