Schwarberg J, Dick J, May A, Michałowski P, Kallinger B, Kammel R, Rommel M, Schulze J (2026)
Publication Language: English
Publication Type: Journal article
Publication year: 2026
Book Volume: 1056
Pages Range: 7-15
DOI: 10.4028/p-tstCC7
Silicon vacancies (VSi) are relevant for quantum
technologies, including sensing, computing, and communication. For the
realization of quantum photonic integrated circuits (QPICs) and,
therefore, co-integration of optical and electrical devices with
resonant excitation through the wafer surface, a-plane 4H-SiC wafers are
required. Transferring established complementary
metal-oxide-semiconductor (CMOS)-compatible processes from c-plane to
a-plane wafers is, therefore, a crucial step. In this work, key
fabrication steps, namely ion implantation, thermal oxidation, and ohmic
contact formation, were investigated for a-plane 4H-SiC substrates. To
demonstrate successful process transfer, p-channel MOS field-effect
transistors were fabricated and electrically characterized, showing
comparable Ion/Ioff ratios and mobilities to their
c-plane counterparts, but with a threshold voltage shift from −7.1 V to
−12.0 V on the a-plane. Additionally, tunneling diodes were realized as
broadband light emitters, with a significant portion of the emission
spectrum falling within the range of off-resonant excitation of VSi centers. The devices maintained light emission functionality down to cryogenic temperatures.
APA:
Schwarberg, J., Dick, J., May, A., Michałowski, P., Kallinger, B., Kammel, R.,... Schulze, J. (2026). Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters. Key Engineering Materials, 1056, 7-15. https://doi.org/10.4028/p-tstCC7
MLA:
Schwarberg, Jannik, et al. "Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters." Key Engineering Materials 1056 (2026): 7-15.
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