Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications (2024) Hack M, Seidel L, Wanitzek M, Oehme M, Schulze J, Schwarz D Journal article A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C (2024) May A, Rommel M, Baier L, Schraml M, Dick J, Jank M, Schulze J Conference contribution In situ, non-invasive novel measurement method for the determination of integrated waveguide losses (2024) Hack M, Kugler B, Wanitzek M, Vijayan P, Schulze J, Oehme M Conference contribution Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers (2024) Seidel L, Liu T, Concepcion O, Spirito D, Benkhelifa A, Kiyek V, Schulze J, et al. Conference contribution Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure (2024) Wanitzek M, Hack M, Ramachandra H, Seidel L, Schwarz D, Schulze J, Oehme M Conference contribution Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations (2024) Ley M, Dick J, Schulze J Conference contribution Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications (2024) Schwarberg J, Karhu R, Kallinger B, Rommel M, Schmidt R, Schulze J Conference contribution Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product (2024) Wanitzek M, Schwarz D, Schulze J, Oehme M Conference contribution Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx (2023) Berkmann F, Steuer O, Ganss F, Prucnal S, Schwarz D, Fischer IA, Schulze J Journal article High mobility Ge 2DHG based MODFETs for low-temperature applications (2023) Weißhaupt D, Funk HS, Oehme M, Bloos D, Berkmann F, Seidel L, Fischer IA, Schulze J Journal article