Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications
Hack M, Seidel L, Wanitzek M, Oehme M, Schulze J, Schwarz D (2024)
Publication Type: Journal article
Publication year: 2024
Journal
Book Volume: 172
Article Number: 108057
DOI: 10.1016/j.mssp.2023.108057
Abstract
The temperature-dependent electroluminescent properties of Ge-Diodes, especially the Ge-Zener-Emitter, with tunnel transitions are investigated. The direct band-gap behavior of Germanium below a temperature of 140 K is demonstrated, facilitated by Zener tunneling. Pulsed excitation of the Ge-Zener-Emitter results in an optical output power density of 6 μW, which is sufficient to excite quantum dots for single-photon emission. The peak energy of 0.86 eV suits the non-resonant excitation of InGaAs quantum dots at cryogenic temperatures. This paper presents a potential optical pump source for a quantum photonic integrated circuit.
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Germany (DE)How to cite
APA:
Hack, M., Seidel, L., Wanitzek, M., Oehme, M., Schulze, J., & Schwarz, D. (2024). Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications. Materials Science in Semiconductor Processing, 172. https://dx.doi.org/10.1016/j.mssp.2023.108057
MLA:
Hack, Michael, et al. "Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications." Materials Science in Semiconductor Processing 172 (2024).
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