Dr.-Ing. Norman Böttcher

Lehrstuhl für Elektronische Bauelemente

A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker (2025) Hartmann A, Boettcher N Conference contribution Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device (2024) Boettcher N, Rommel M, Erlbacher T Journal article Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD (2024) Böttcher N, Sakai K, Szabo M, Beuer S, Rommel M Journal article, Report Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C (2024) Böttcher N, Kauth J, Rommel M, May A, Baier L, Jank M Journal article, Original article Adjustable Current Limiting Function with a Monolithically Integrated SiC Circuit Breaker Device (2023) Böttcher N, Takamori T, Wada K, Erlbacher T, Saito W, Nishizawa SI Journal article, Original article Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v (2022) Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T Conference contribution Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device (2022) Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T Conference contribution Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers (2022) Becker T, Boettcher N, Erlbacher T Conference contribution, Conference Contribution Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device (2022) Böttcher N, Takamori T, Wada K, Erlbacher T, Saito W, Nishizawa SI Conference contribution, Conference Contribution A Monolithically Integrated SiC Circuit Breaker (2021) Boettcher N, Erlbacher T Journal article