Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device

Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T (2022)

Publication Type: Conference contribution

Publication year: 2022

Journal

2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2022-May

Pages Range: 261-264

Conference Proceedings Title: Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Event location: Vancouver, BC, CAN

ISBN: 9781665422017

DOI: 10.1109/ISPSD49238.2022.9813628

Abstract

This work presents the switching performance of a novel solid-state circuit breaker device suitable for DC-applications up to 800 V. These "dual thyristor"devices are manufactured employing a 4H-SiC JFET technology. With respect to scalability, the influence of specific design parameters on the quasi-static output characteristics are discussed along with corresponding fabrication aspects. In order to investigate the switching performance, clamped and unclamped inductive switching (CIS and UIS) experiments at up to 800 V are carried out. In case of CIS, current clearance is achieved within 642 ns after the self-sensed trigger event at 1.75 A. The UIS experiments reveal stable current handling capability during avalanche.

Related research project(s)

Monolithisch integrierter Überstromschutzschalter basierend auf 4H-SiC JFET Technologie (SiC-DCBreaker) Aug. 1, 2019 - Aug. 1, 2022

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Tokyo Metropolitan University (TMU) / 首都大学東京 JP Japan (JP) Research Institute for Applied Mechanics (RIAM) JP Japan (JP)

How to cite

APA:

Boettcher, N., Takamori, T., Wada, K., Saito, W., Nishizawa, S.I., & Erlbacher, T. (2022). Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 261-264). Vancouver, BC, CAN: Institute of Electrical and Electronics Engineers Inc..

MLA:

Boettcher, Norman, et al. "Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device." Proceedings of the 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Vancouver, BC, CAN Institute of Electrical and Electronics Engineers Inc., 2022. 261-264.

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