Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C

Böttcher N, Kauth J, Rommel M, May A, Baier L, Jank M (2024)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2024

Journal

Journal of Microelectronics and Electronic Packaging International Microelectronics And Packaging Society

Publisher: IMAPS-International Microelectronics and Packaging Society

Book Volume: 21

Pages Range: 73-79

Journal Issue: 4

DOI: 10.4071/001c.127390

Authors with CRIS profile

Norman Böttcher Lehrstuhl für Elektronische Bauelemente Julian Kauth Lehrstuhl für Elektronische Bauelemente Alexander May Lehrstuhl für Elektronische Bauelemente Michael Jank Department Elektrotechnik-Elektronik-Informationstechnik (EEI)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Böttcher, N., Kauth, J., Rommel, M., May, A., Baier, L., & Jank, M. (2024). Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C. Journal of Microelectronics and Electronic Packaging, 21(4), 73-79. https://doi.org/10.4071/001c.127390

MLA:

Böttcher, Norman, et al. "Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C." Journal of Microelectronics and Electronic Packaging 21.4 (2024): 73-79.

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