Prof. Dr.-Ing. Peter Wellmann



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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Close space physical vapor transport growth of SiC, doped layers and thin crystals (2026) Strüber S, Tana L, Schneider O, Grazzi C, Wagner T, Wellmann P Journal article Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals (2026) Zöcklein J, Strüber S, Grazzi C, Arneberg NC, Straub T, Greulich-Weber S, Wellmann P Journal article Close Space PVT Growth of N-and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS™ Growth Machine (2026) Strüber S, Grazzi C, Tana L, Schneider O, Wagner T, Wiedemann JP, Wunder P, Wellmann P Journal article Electronic structure and band gap modulation of Ba–S compounds via tuned hybrid functional calculations (2026) Jamshaid S, Miyazaki H, Kimura K, Hayashi K, Wellmann P Journal article Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components (2025) Strüber S, Ihle J, Zöcklein J, Steiner J, Wellmann P Book chapter / Article in edited volumes Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth (2025) Ihle J, Wellmann P Journal article Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications (2024) Chaussende D, Tabouret V, Crisci A, Morais M, Coindeau S, Berthomé G, Kollmuß M, et al. Journal article Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer (2024) Nguyen BD, Steiner J, Wellmann P, Sandfeld S Journal article Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches (2024) Freund T, Jamshaid S, Monavvar M, Wellmann P Journal article Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules (2024) Schultheiß J, Ihle J, Nanot SU, Bonanomi S, Munoz DC, Hammer R, Wellmann P Book chapter / Article in edited volumes