PD Dr. Tobias Erlbacher

Lehrstuhl für Elektronische Bauelemente Technische Fakultät

Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications () Schraml M, Rommel M, Papathanasiou N, Erlbacher T Journal article Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements (2024) Cornigli D, Schlichting H, Becker T, Larcher L, Erlbacher T, Pešić M Journal article Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology (2024) Okeil H, Erlbacher T, Wachutka G Journal article Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes (2024) Okeil H, Erlbacher T, Wachutka G Journal article Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask (2024) Rusch O, Brueckner K, Erlbacher T Book chapter / Article in edited volumes The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Journal article Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices (2023) Baierhofer D, Thomas B, Staiger F, Marchetti B, Förster C, Erlbacher T Journal article Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters (2023) Schraml M, Papathanasiou N, May A, Weiss T, Erlbacher T Book chapter / Article in edited volumes 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design (2023) Schraml M, Papathanasiou N, May A, Rommel M, Erlbacher T Conference contribution Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC (2022) May A, Rommel M, Beuer S, Erlbacher T Journal article