Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

Schraml M, Papathanasiou N, May A, Weiss T, Erlbacher T (2023)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2023

Journal

Key Engineering Materials Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Series: Key Engineering Materials

Book Volume: 947

Pages Range: 77-82

DOI: 10.4028/p-959z1t

Abstract

4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing I-V characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Al-implantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.

Authors with CRIS profile

Michael Schraml Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

sglux GmbH DE Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Schraml, M., Papathanasiou, N., May, A., Weiss, T., & Erlbacher, T. (2023). Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters. In (pp. 77-82). Trans Tech Publications Ltd.

MLA:

Schraml, Michael, et al. "Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters." Trans Tech Publications Ltd, 2023. 77-82.

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