Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication (2013)
Rumler M, Fader R, Haas A, Rommel M, Bauer A, Frey L
Journal article, Original article
Accuracy of wafer level alignment with substrate conformal imprint lithography (2013)
Fader R, Rommel M, Bauer A, Rumler M, Frey L, Verschuuren MA, Van De Laar R, et al.
Journal article
Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts (2013)
Adelmann B, Hürner A, Schlegel T, Bauer A, Frey L, Hellmann R
Other publication type
Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi (2013)
Noll S, Scholten D, Grieb M, Bauer A, Frey L
Authored book, Volume of book series
Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC (2013)
Häublein V, Temmel G, Mitlehner H, Rattmann G, Strenger C, Hürner A, Bauer A, et al.
Authored book, Volume of book series
Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction (2013)
Rommel M, Jambreck JD, Lemberger M, Bauer A, Frey L, Murakami K, Richter C, Weinzierl P
Journal article, Original article
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC (2013)
Ouennoughi Z, Strenger C, Bourouba F, Haeublein V, Ryssel H, Frey L
Journal article, other
Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation (2013)
Hürner A, Schlegl T, Adelmann B, Mitlehner H, Hellmann R, Bauer A, Frey L
Authored book, Volume of book series
Doping induced lattice misfit in 4H-SiC homoepitaxy (2012)
Kallinger B, Berwian P, Friedrich J, Mueller G, Weber AD, Volz E, Trachta G, et al.
Journal article
Resonant metamaterials for contrast enhancement in optical lithography (2012)
Dobmann S, Shyroki D, Banzer P, Erdmann A, Peschel U
Journal article