Infineon Technologies Austria AG

Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Conference contribution A 52-to-67 GHz Dual-Core Push-Push VCO in 40-nm CMOS (2017) Issakov V, Rimmelspacher J, Trotta S, Tiebout M, Hagelauer AM, Weigel R Conference contribution, Original article Metastable defects in proton implanted and annealed silicon (2016) Jelinek M, Laven JG, Ganagona N, Job R, Schustereder W, Schulze HJ, Rommel M, Frey L Journal article A DLTS study of hydrogen doped czochralski-grown silicon (2015) Jelinek M, Laven JG, Kirnstoetter S, Schustereder W, Schulze HJ, Rommel M, Frey L Journal article, Original article Modelling of the electrochemical etch stop with high reverse bias across pn-junctions (2015) Szwarc R, Frey L, Weber H, Moder I, Erlbacher T, Rommel M, Bauer AJ Conference contribution, Conference Contribution New method to increase the doping efficiency of proton implantation in a high-dose regime (2014) Jelinek M, Laven JG, Job R, Schustereder W, Schulze HJ, Rommel M, Frey L Conference contribution, Conference Contribution MeV-proton channeling in crystalline silicon (2014) Jelinek M, Schustereder W, Laven JG, Schulze HJ, Kirnstoetter S, Rommel M, Frey L Conference contribution, Conference Contribution Deep-level defects in high-dose proton implanted and high-temperature annealed silicon (2014) Jelinek M, Laven JG, Rommel M, Schustereder W, Schulze HJ, Frey L, Job R Conference contribution, Conference Contribution DLTS characterization of proton-implanted silicon under varying annealing conditions (2014) Laven JG, Jelinek M, Job R, Schustereder W, Schulze HJ, Rommel M, Frey L Journal article, Original article Advanced Microwave Imaging (2012) Ahmed SS, Schießl A, Gumbmann F, Tiebout M, Methfessel SD, Schmidt LP Journal article