Deep-level defects in high-dose proton implanted and high-temperature annealed silicon

Jelinek M, Laven JG, Rommel M, Schustereder W, Schulze HJ, Frey L, Job R (2014)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2014

Publisher: Electrochemical Society Inc.

Book Volume: 64

Pages Range: 173-185

DOI: 10.1149/06411.0173ecst

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Infineon Technologies Austria AG AT Austria (AT) Infineon Technologies AG DE Germany (DE) Fachhochschule Münster DE Germany (DE)

How to cite

APA:

Jelinek, M., Laven, J.G., Rommel, M., Schustereder, W., Schulze, H.J., Frey, L., & Job, R. (2014). Deep-level defects in high-dose proton implanted and high-temperature annealed silicon. In Proceedings of the 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting (pp. 173-185). Electrochemical Society Inc..

MLA:

Jelinek, M., et al. "Deep-level defects in high-dose proton implanted and high-temperature annealed silicon." Proceedings of the 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting Electrochemical Society Inc., 2014. 173-185.

BibTeX: Download