DLTS characterization of proton-implanted silicon under varying annealing conditions

Laven JG, Jelinek M, Job R, Schustereder W, Schulze HJ, Rommel M, Frey L (2014)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Physica Status Solidi Akademie Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 251

Pages Range: 2189-2192

Journal Issue: 11

DOI: 10.1002/pssb.201400028

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fachhochschule Münster DE Germany (DE) Infineon Technologies Austria AG AT Austria (AT) Infineon Technologies AG DE Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Laven, J.G., Jelinek, M., Job, R., Schustereder, W., Schulze, H.-J., Rommel, M., & Frey, L. (2014). DLTS characterization of proton-implanted silicon under varying annealing conditions. Physica Status Solidi, 251(11), 2189-2192. https://doi.org/10.1002/pssb.201400028

MLA:

Laven, J. G., et al. "DLTS characterization of proton-implanted silicon under varying annealing conditions." Physica Status Solidi 251.11 (2014): 2189-2192.

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