Lehrstuhl für Elektronische Bauelemente

Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars (2024) Popp L, Kampe P, Fritsch B, Hutzler A, Poller MJ, Albert J, Schühle P Journal article Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration (2024) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Conference contribution, Abstract of a poster SiC engineered substrate: increasing SiC MOSFETs current density from device to module level (2024) Becker T Conference contribution, Conference Contribution Unconventional conductivity increase in multilayer black phosphorus (2023) Kolesnik-Gray M, Meingast L, Siebert M, Unbehaun T, Huf T, Ellrott G, Abellan Saez G, et al. Journal article Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3) (2023) Hutzler A, Fritsch B, Matthus CD, Jank MP, Rommel M Journal article, Erratum Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h (2023) Geiling J, Wagner L, Auer F, Ortner F, Nuß A, Seyfried R, Stammberger F, et al. Journal article Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices (2023) Marhenke J, Dirnecker T, Vogel N, Rommel M Journal article Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy (2023) Couasnon T, Fritsch B, Jank MP, Blukis R, Hutzler A, Benning LG Journal article Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications (2023) Völkl A, Toutouly J, Drobek D, Apeleo Zubiri B, Spiecker E, Klupp Taylor R Journal article, Original article The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Journal article