Spark plasma sintering of paper-derived Ti3AlC2-based composites: Influence of sintering temperature (2021) Syrtanov M, Kashkarov E, Murashkina T, Travitzky N Conference contribution Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology (2020) Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T Conference contribution Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications (2020) Albrecht M, Pérez D, Martens R, Bauer AJ, Erlbacher T Conference contribution Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping (2020) Kocher M, Schlichting H, Kallinger B, Rommel M, Bauer AJ, Erlbacher T Conference contribution Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors (2019) Schlichting H, Sledziewski T, Bauer A, Erlbacher T Journal article Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article