Steiner J, Arzig M, Hsiao TC, Wellmann P (2019)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2019
Publisher: Trans Tech Publications Ltd
Book Volume: 963
Pages Range: 42-45
Conference Proceedings Title: Materials Science Forum
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.42
The influence of four different SiC source powder size distributions on the sublimation behavior during physical vapor transport growth of SiC was studied. The growth processes were carried out in a 3 inch crystal growth setup and observed in situ using advanced 3D computed tomography X-ray visualization. The single modal D90 size distribution of two source powders was 50 µm and 200 µm, respectively, with a corresponding average powder density of 1.17 g/cm³. The third source powder consisted of a blend of the previously named powders and exhibited an average powder density of 1.66 g/cm³ with a bimodal particle size distribution. The last source was composed of a solid polycrystalline SiC cylinder. The bimodal powder source exhibited a smoother morphology change and material consumption during the growth run and led to a much more stable shape change of the growth interface compared to the single modal source powders. The solid source featured the least morphology change. Therefore, with a careful adaption of the source material stable growth conditions can be achieved.
APA:
Steiner, J., Arzig, M., Hsiao, T.C., & Wellmann, P. (2019). Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules. Materials Science Forum, 963, 42-45. https://doi.org/10.4028/www.scientific.net/MSF.963.42
MLA:
Steiner, Johannes, et al. "Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules." Materials Science Forum 963 (2019): 42-45.
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