Prospects of bulk growth of 3C-SiC using sublimation growth

Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 1004 MSF

Pages Range: 113-119

Conference Proceedings Title: Materials Science Forum

Event location: Kyoto JP

ISBN: 9783035715798

DOI: 10.4028/www.scientific.net/MSF.1004.113

Abstract

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Si-rich gas phase was realized by the application of a Tantalum getter that was integrated into the graphite-based growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seeds already containing the required 3C polytype.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Philipp Schuh Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Manuel Kollmuß Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Michael Schöler Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Johannes Steiner Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

NOVASiC FR France (FR) LPE S.P.A. IT Italy (IT) CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT)

How to cite

APA:

Wellmann, P., Schuh, P., Kollmuß, M., Schöler, M., Steiner, J., Zielinski, M.,... La Via, F. (2020). Prospects of bulk growth of 3C-SiC using sublimation growth. Materials Science Forum, 1004 MSF, 113-119. https://doi.org/10.4028/www.scientific.net/MSF.1004.113

MLA:

Wellmann, Peter, et al. "Prospects of bulk growth of 3C-SiC using sublimation growth." Materials Science Forum 1004 MSF (2020): 113-119.

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