Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F (2020)
Publication Type: Journal article
Publication year: 2020
Publisher: Trans Tech Publications Ltd
Book Volume: 1004 MSF
Pages Range: 113-119
Conference Proceedings Title: Materials Science Forum
ISBN: 9783035715798
DOI: 10.4028/www.scientific.net/MSF.1004.113
Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Si-rich gas phase was realized by the application of a Tantalum getter that was integrated into the graphite-based growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seeds already containing the required 3C polytype.
APA:
Wellmann, P., Schuh, P., Kollmuß, M., Schöler, M., Steiner, J., Zielinski, M.,... La Via, F. (2020). Prospects of bulk growth of 3C-SiC using sublimation growth. Materials Science Forum, 1004 MSF, 113-119. https://doi.org/10.4028/www.scientific.net/MSF.1004.113
MLA:
Wellmann, Peter, et al. "Prospects of bulk growth of 3C-SiC using sublimation growth." Materials Science Forum 1004 MSF (2020): 113-119.
BibTeX: Download