Manuel Kollmuß

Institute Materials for Electronics and Energy Technology (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Novel Photonic Applications of Silicon Carbide (2023) Ou H, Shi X, Lu Y, Kollmuß M, Steiner J, Tabouret V, Syväjärvi M, et al. Journal article, Review article Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs (2023) Kollmuß M, Shi X, Ou H, Wellmann P Book chapter / Article in edited volumes Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC (2023) Kollmuß M, La Via F, Wellmann P Journal article In situ bow reduction during sublimation growth of cubic silicon carbide (2022) Kollmuß M, Mauceri M, Roder M, La Via F, Wellmann P Journal article Multiscale Simulations for Defect-Controlled Processing of Group IV Materials (2022) Calogero G, Deretzis I, Fisicaro G, Kollmuß M, La Via F, Lombardo SF, Schöler M, et al. Journal article Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications (2022) Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P Conference contribution New approaches and understandings in the growth of cubic silicon carbide (2021) Via FL, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, et al. Journal article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article