Katja Konias



Organisationseinheit


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


Publikationen (Download BibTeX)


Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.29
Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.11
Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23
Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14. https://dx.doi.org/10.1557/PROC-1069-D01-01
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520
Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.267

Zuletzt aktualisiert 2016-25-06 um 05:02