In-situ X-ray measurements of defect generation during PVT growth of SiC

Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A (2007)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2007

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 556-557

Pages Range: 267-270

Conference Proceedings Title: Materials Science Forum 556-557

DOI: 10.4028/www.scientific.net/MSF.556-557.267

Abstract

A standard inductively heated PVT growth furnace modified for diffraction experiments with high energy x-rays in focussing Laue geometry was built. The growth furnace will be placed in front of a tungsten anode high energy x-ray source. The Laue diffraction pattern of the growing crystal can be detected on a CCD camera detector. Evolution of crystalline defects as a function of the growth process parameters will be infered from the diffraction experiments. The furnace design and results of first test measurements serving as proof of concept are reported.

Authors with CRIS profile

Katja Konias Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Rainer Hock Professur für Kristallographie und Strukturphysik Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Michael Miller Stefan Ossege Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik (ICSP)

How to cite

APA:

Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://doi.org/10.4028/www.scientific.net/MSF.556-557.267

MLA:

Konias, Katja, et al. "In-situ X-ray measurements of defect generation during PVT growth of SiC." Materials Science Forum 556-557 (2007): 267-270.

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