Bulk growth of SiC

Wellmann P, Müller R, Sakwe A, Künecke U, Hens P, Stockmeier M, Konias K, Hock R, Magerl A, Pons M (2008)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2008

Journal

Materials Research Society Symposium - Proceedings Materials Research Society

Publisher: Materials Research Society

Book Volume: 1069

Pages Range: 3-14

Conference Proceedings Title: MRS Proceedings / Volume 1069 / 2008

Event location: San Francisco, California US

DOI: 10.1557/PROC-1069-D01-01

Abstract

The paper reviews the basics of SiC bulk growth by the physical vapor transport (PVT) method and discusses current and possible future concepts to improve crystalline quality. In-situ process visualization using x-rays, numerical modeling and advanced doping techniques will be briefly presented which support growth process optimization. The ,,pure" PVT technique will be compared with related developments like the so called Modified-PVT, Continuous-Feeding-PVT, High-Temperature-CVD and Halide-CVD. Special emphasis will be put on dislocation generation and annihilation and concepts to reduce dislocation density during SiC bulk crystal growth. The dislocation study is based on a statistical approach. Rather than following the evolution of a single defect, statistic data which reflect a more global dislocation density evolution are interpreted. In this context a new approach will be presented which relates thermally induced strain during growth and dislocation patterning into networks.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Ulrike Künecke Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Philip Hens Graduiertenzentrum der FAU Katja Konias Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Rainer Hock Professur für Kristallographie und Strukturphysik Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik (ICSP)

How to cite

APA:

Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14. https://doi.org/10.1557/PROC-1069-D01-01

MLA:

Wellmann, Peter, et al. "Bulk growth of SiC." Materials Research Society Symposium - Proceedings 1069 (2008): 3-14.

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