Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, Hock R, Magerl A, Pons M, Winnacker A, Wellmann P (2008)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2008

Journal

physica status solidi (b) Wiley

Publisher: Wiley-VCH Verlag

Book Volume: 245

Pages Range: 1239-1256

Journal Issue: 7

DOI: 10.1002/pssb.200743520

Abstract

The paper reviews research on advanced crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p-type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n-type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 degrees C and higher) is beneficial for low dislocation densities. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Philip Hens Graduiertenzentrum der FAU Ulrike Künecke Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Katja Konias Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Rainer Hock Professur für Kristallographie und Strukturphysik Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Albrecht Winnacker Technische Fakultät Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology FR France (FR)

How to cite

APA:

Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://doi.org/10.1002/pssb.200743520

MLA:

Sakwe, Aloysius, et al. "Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution." physica status solidi (b) 245.7 (2008): 1239-1256.

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