Katja Konias


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Institute Materials for Electronics and Energy Technology (i-MEET)

Publications (Download BibTeX)

Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.29
Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.11
Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23
Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14. https://dx.doi.org/10.1557/PROC-1069-D01-01
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520
Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.267

Last updated on 2016-25-06 at 05:02