Felix Fromm


Lehrstuhl für Laserphysik

Publications (Download BibTeX)

Beljakowa, S., Hauck, M., Bockstedte, M.G., Fromm, F., Hundhausen, M., Nagasawa, H.,... Krieger, M. (2014). Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures. Materials Science Forum, 778-780, 265-268. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.265
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2014). Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate. Journal of Physics D-Applied Physics, 47, 305103 (5pp). https://dx.doi.org/10.1088/0022-3727/47/30/305103
Fromm, F., Oliveira, M.H., Molina-Sanchez, A., Hundhausen, M., Lopes, J.M.J., Riechert, H.,... Seyller, T. (2013). Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, n/a, n/a. https://dx.doi.org/10.1088/1367-2630/15/4/043031
Waldmann, D., Butz, B., Bauer, S., Englert, J., Jobst, J., Ullmann, K.,... Spiecker, E. (2013). Robust graphene membranes in a silicon carbide frame. ACS nano, 7(5), 4441-4448. https://dx.doi.org/10.1021/nn401037c
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2013). Silicon nitride as top gate dielectric for epitaxial graphene. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012. (pp. 149-152). Trans Tech Publications.
Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.649
Waldmann, D., Jobst, J., Fromm, F., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 45, 154006. https://dx.doi.org/10.1088/0022-3727/45/15/154006
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206. https://dx.doi.org/10.1063/1.3643034

Last updated on 2016-05-05 at 05:39