Wehrfritz P, Fromm F, Malzer S, Seyller T (2013)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2013
Original Authors: Wehrfritz P., Fromm F., Malzer S., Seyller T.
Publisher: Trans Tech Publications
Edited Volumes: Silicon Carbide and Related Materials 2012
Series: Materials Science Forum
Pages Range: 149-152
Event location: St. Petersburg
DOI: 10.4028/www.scientific.net/MSF.740-742.149
Silicon nitride (SiN) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a top gate dielectric on epitaxial graphene on 6H-SiC(0001). We compare x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transport measurements which were performed before and after the SiN deposition. We demonstrate that closed layers of SiN are formed without the need for surface activation and that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping. For a limited gate voltage range, a small hysteresis of 0.2 V is observed in top-gated field effect devices. © (2013) Trans Tech Publications, Switzerland.
APA:
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2013). Silicon nitride as top gate dielectric for epitaxial graphene. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012. (pp. 149-152). Trans Tech Publications.
MLA:
Wehrfritz, Peter, et al. "Silicon nitride as top gate dielectric for epitaxial graphene." Silicon Carbide and Related Materials 2012. Ed. Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications, 2013. 149-152.
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