Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation

Ostler M, Koch R, Speck F, Fromm F, Vita H, Hundhausen M, Horn K, Seyller T (2012)

Publication Type: Journal article

Publication year: 2012


Publisher: Trans Tech Publications

Book Volume: 717-720

Pages Range: 649

DOI: 10.4028/


Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30® reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present angle-resolved photoemission spectroscopy (ARPES), x-ray induced photoelectron spectroscopy (XPS) and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decoupling effect is demonstrated by ARPES measurements showing a graphene-like π band. XPS shows whether the oxidation takes place in the buffer layer or at the interface. Raman spectroscopy is well suited to investigate oxygen induced defects in graphene-like material. © (2012) Trans Tech Publications.

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Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649.


Ostler, Markus, et al. "Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation." Materials Science Forum 717-720 (2012): 649.

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