Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD

Böttcher N, Sakai K, Szabo M, Beuer S, Rommel M (2024)

Publication Status: Published

Publication Type: Journal article, Report

Publication year: 2024

Journal

Solid State Phenomena Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 358

Pages Range: 133-140

DOI: 10.4028/p-4Rj3jY

Authors with CRIS profile

Norman Böttcher Lehrstuhl für Elektronische Bauelemente Maximilian Szabo Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Böttcher, N., Sakai, K., Szabo, M., Beuer, S., & Rommel, M. (2024). Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD. Solid State Phenomena, 358, 133-140. https://doi.org/10.4028/p-4Rj3jY

MLA:

Böttcher, Norman, et al. "Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD." Solid State Phenomena 358 (2024): 133-140.

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