Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components

Strüber S, Ihle J, Zöcklein J, Steiner J, Wellmann P (2025)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2025

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Series: Materials Science Forum

Book Volume: 1156

Pages Range: 83-92

DOI: 10.4028/p-qcdYf7

Abstract

This work discusses three aspects of the PVT growth process to reach a higher SiC crystal yield: (i) Type of carbon isolation material and procedure to maintain reproducible growth conditions from one process to the next. (ii) The pros and cons of temperature and power control (or a mixture of both) during the SiC crystal growth phase of the PVT process; and (iii) the selection of a set of process parameters and the specifications of the grown SiC crystal, which serve as a fingerprint of reproducible growth conditions (related to the selection and design of hot zone isolation components).

Authors with CRIS profile

Sven Strüber Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Jonas Ihle Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Julian Zöcklein Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Johannes Steiner Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Strüber, S., Ihle, J., Zöcklein, J., Steiner, J., & Wellmann, P. (2025). Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components. In (pp. 83-92). Trans Tech Publications Ltd.

MLA:

Strüber, Sven, et al. "Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components." Trans Tech Publications Ltd, 2025. 83-92.

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