Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC

May A, Rommel M, Beuer S, Erlbacher T (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 1062

Pages Range: 185-189

DOI: 10.4028/p-36s1w4

Abstract

P-type Ti/Al-based contact vias of different sizes but identical processing were electrically characterized using linear transfer length method (TLM) patterns and metal-oxide-semiconductor (MOS) transistors. While the TLM patterns and MOS transistors with large vias follow ohmic contact behavior, Schottky contact properties were observed for smaller contact via dimensions. Focused ion beam (FIB) analysis of the contact vias verified the presence of Ti3SiC2 on large 66 μm x 25 μm contact vias and its absence on smaller 16 μm x 3 μm ones, correlating its absence with the electrical Schottky properties.

Authors with CRIS profile

Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

May, A., Rommel, M., Beuer, S., & Erlbacher, T. (2022). Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC. Materials Science Forum, 1062, 185-189. https://doi.org/10.4028/p-36s1w4

MLA:

May, Alexander, et al. "Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC." Materials Science Forum 1062 (2022): 185-189.

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