Schwanke S, Trempa M, Schuck K, Kranert C, Mueller M, Reimann C, Kuczynski M, Schroll G, Sans J, Stenzenberger J, Hesse K, Heitmann J, Friedrich J (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 574
DOI: 10.1016/j.jcrysgro.2021.126304
The extension of the areas with extremely low minority carrier lifetime in cast silicon ingots for photovoltaic application is a crucial parameter for the industrial manufacturers determining the yield of the grown Si ingot material usable for solar cell fabrication. In order to make a forecast of this redzone extension in dependence on the purity levels of the consumables like crucible, Si3N4-coating and Si-feedstock, a numerical 2D model was used to investigate the diffusive iron (Fe) incorporation into the silicon during the directional solidification process. In order to set up this model, the diffusion parameters of Fe in crucible and Si3N4-coating were determined by 1D numerical analysis of annealing experiments. These values were used in a 2D model to simulate several G1 experiments with varying Fe impurity levels of all crucible consumables (SiO2-crucible and internal Si3N4-coating).
APA:
Schwanke, S., Trempa, M., Schuck, K., Kranert, C., Mueller, M., Reimann, C.,... Friedrich, J. (2021). Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock. Journal of Crystal Growth, 574. https://doi.org/10.1016/j.jcrysgro.2021.126304
MLA:
Schwanke, S., et al. "Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock." Journal of Crystal Growth 574 (2021).
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