Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test

Zhao D, Letz S, Yu Z, Schletz A, März M (2020)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2020

Journal

Microelectronics Reliability Elsevier

DOI: 10.1016/j.microrel.2020.113785

Abstract

The thin film metallization, as a key structure of the semiconductor devices, realizes the bond-ability of the chips on circuit carriers and directly influences the electrical and mechanical reliability of the interconnection. In a previous study, a recently developed method, cross-sectional nanoindentations (CSN), has been utilized to characterize the adhesion strength degradation of the thin film metallization and its feasibility has been proved. In this paper, based on the now extended CSN test results from the previous study, a combined experimental and numerical approach with a cohesive zone model (CZM) is developed in order to evaluate the adhesion strength degradation of the thin film metallization quantitatively by means of the critical strain energy release rate Gc and therefore to obtain a measure with physical meaning and extrapolation ability.

Authors with CRIS profile

Dawei Zhao Lehrstuhl für Elektronische Bauelemente Sebastian Letz Lehrstuhl für Leistungselektronik Martin März Lehrstuhl für Leistungselektronik

Related research project(s)

An Approach for the Characterization of the Adhesion Strength Degradation of Semiconductor's Thin Film Metallizations Sept. 1, 2021 - Sept. 30, 2023 Technologies and Processes for Hetero-Integration of Power Electronic Systems (MIIMOSYS) Aug. 1, 2017 - Sept. 30, 2021

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Zhao, D., Letz, S., Yu, Z., Schletz, A., & März, M. (2020). Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test. Microelectronics Reliability. https://dx.doi.org/10.1016/j.microrel.2020.113785

MLA:

Zhao, Dawei, et al. "Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test." Microelectronics Reliability (2020).

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