Laser Writing of Scalable Single Color Centers in Silicon Carbide

Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, Babin C, Erlekampf J, Berwian P, Booth MJ, Wrachtrup J (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Nano Letters American Chemical Society

Book Volume: 19

Pages Range: 2377-2383

Journal Issue: 4

DOI: 10.1021/acs.nanolett.8b05070

Abstract

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems (Awschalom et al. Nat. Photonics 2018, 12, 516-527; Atatüre et al. Nat. Rev. Mater. 2018, 3, 38-51). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (V Si ) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single V Si centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing V Si centers and concluded that there are about 16 photons involved in the laser writing V Si center process. Our results represent a powerful tool in the fabrication of single V Si centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.

Authors with CRIS profile

Roland Nagy
Jürgen Erlekampf Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Universität Stuttgart DE Germany (DE) University of Oxford GB United Kingdom (GB)

How to cite

APA:

Chen, Y.-C., Salter, P.S., Niethammer, M., Widmann, M., Kaiser, F., Nagy, R.,... Wrachtrup, J. (2019). Laser Writing of Scalable Single Color Centers in Silicon Carbide. Nano Letters, 19(4), 2377-2383. https://doi.org/10.1021/acs.nanolett.8b05070

MLA:

Chen, Yu-Chen, et al. "Laser Writing of Scalable Single Color Centers in Silicon Carbide." Nano Letters 19.4 (2019): 2377-2383.

BibTeX: Download